首页 >TEF6616T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Single-packageHighPerformance,LowPowerAVR8-bitMicrocontrollerwithLIN Description Atmel®ATA6616/ATA6617isaSystem-in-Package(SiP)product,whichisparticularlysuitedforcompleteLIN-busnodeapplications.Itsupportshighlyintegratedsolutionsforin-vehicleLINnetworks.ThefirstchipistheLIN-system-basis-chip(LIN-SBC)ATA6624,whichhasanintegrated | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
8K/16KFlashMicrocontrollerwithLINTransceiver,5VRegulatorandWatchdog | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
8K/16KFlashMicrocontrollerwithLINTransceiver,5VRegulatorandWatchdog | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
AtmelATA6616-EK/ATA6617-EKDevelopmentBoardV1.1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
HELP3EDual-band1&5,6CDMA/WCDMA3.4VLinearPowerAmplifierModule | ANADIGICS ANADIGICS, Inc | ANADIGICS | ||
FanlessEmbeddedBoxPCwithIntel®Celeron®ProcessorN3350/N4200 Features ■Intel®Pentium®N42002.5GHz/Celeron®N33502.4GHz ■DDR3L1600MHzSODIMMx1,MemoryMax.upto8GB ■COMx6:RS-232/422/485x2+RS-232x4 ■USB3.2Gen1x4 ■VGA+HDMIOutput,SupportDualView/SimultaneousDisplay ■Supports2.5”DriveBayx1,mSATA ■Supports8Ch | AAEONAAEON Technology 研扬科技研扬科技（苏州）有限公司 | AAEON | ||
N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
DirectFETPowerMOSFET Description TheIRF6616combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievelowcombinedon-stateandswitchinglossinapackagethathasthefootprintareaofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexis | IRF International Rectifier | IRF | ||
RoHScompliantcontainingnoleadorbormide Description TheIRF6616combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievelowcombinedon-stateandswitchinglossinapackagethathasthefootprintareaofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexis | IRF International Rectifier | IRF | ||
RoHScompliantcontainingnoleadorbormide Description TheIRF6616combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievelowcombinedon-stateandswitchinglossinapackagethathasthefootprintareaofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexis | IRF International Rectifier | IRF |
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