SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Voltage and High Current : VCEO=50V(Min.), I c=150mA(Max.) . Excellent hp£ Linearity : hFE(IC=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=ld3(Typ. ) at f=lkHz . Complementary t

文件：125.01 Kbytes 页数：3 Pages

TOSHIBA

东芝

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. FEATURES . Small Reverse Transfer Capacitance : Cre =0.7pF (Typ.) . Low Noise Figure : NF=2.5dB (Typ.) (f=100MHz)

文件：205.37 Kbytes 页数：6 Pages

TOSHIBA

东芝

SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Voltage and High Current : VcEO=-50V(Min.), I c=-150mA(Max. . Excellent hpE Linearity : hFE (Ic=0.1mA)/hFE (Ic=2mA)=0.95(Typ.) . Low Noise : NF=1.8dB(Typ . ) at f=lkHz . Complementa

文件：84.07 Kbytes 页数：2 Pages

TOSHIBA

东芝

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High h FE : hFE=106~300 . 1 Watts Amplifier Applications. . Complementary to TED1802

文件：77.07 Kbytes 页数：2 Pages

TOSHIBA

东芝

SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

UDIO POWER AMPLIFIAER APPLICATIONS. FEATURES . High hpE : hFE=106~300 . 1W Output Applications. . Complementary to TED1702.

文件：75.26 Kbytes 页数：2 Pages

TOSHIBA

东芝

Dual Port SMD 10/100Base-T Isolation Transformer Modules

文件：144.24 Kbytes 页数：3 Pages

TALEMA

Dual Port SMD 10/100Base-T Isolation Transformer Modules

文件：144.24 Kbytes 页数：3 Pages

TALEMA

Dual Port SMD 10/100Base-T Isolation Transformer Modules

文件：144.24 Kbytes 页数：3 Pages

TALEMA

Dual Port SMD 10/100Base-T Isolation Transformer Modules

文件：144.24 Kbytes 页数：3 Pages

TALEMA

Dual Port SMD 10/100Base-T Isolation Transformer Modules

文件：144.24 Kbytes 页数：3 Pages

TALEMA