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TE48F4400P0Z0Q0中文资料NUMONYX数据手册PDF规格书
TE48F4400P0Z0Q0规格书详情
Introduction
This datasheet contains information about the Numonyx™ Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.
Product Features
High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/word
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 µs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)
产品属性
- 型号:
TE48F4400P0Z0Q0
- 制造商:
NUMONYX
- 制造商全称:
Numonyx B.V
- 功能描述:
StrataFlash㈢ Cellular Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TLC(竞沃) |
23+ |
NA |
3000 |
贴片保险丝 |
询价 | ||
TLC(竞沃) |
21+ |
SMD |
4000 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
电气仪器 |
23+ |
模块 |
100 |
正规渠道原装正品 |
询价 | ||
TOKY/东崎 |
1835+ |
SMD |
528 |
TOKY/东崎 TE4-RB10W SMD 1835+ |
询价 | ||
17+ |
DIP |
50 |
原装现货 |
询价 | |||
Team |
21+ |
标准封装 |
5000 |
进口原装,订货渠道! |
询价 | ||
INFINEON |
23+ |
SOT23 |
8000 |
只做原装现货 |
询价 | ||
ROHM/罗姆 |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
询价 | ||
4827 |
原装现货 |
询价 |