采集型隔离模块

TExxxxN系列是一种前级电压/电流信号输入，后级电压信号输出的有源隔离模块，模块内部嵌入了一个高效微功率电源，可以在向内部信号处理电路供电的同时向外围电路输出一路隔离电源。由于内部采用电磁隔离技术，相比光耦隔离具有更好的温漂特性和线性度。此模块为两隔离，电源输入、信号输出和电源输出、信号输入之间隔离，且该系列产品增加了外部零点、满度调节端，可根据需求自行设计调节。 ·两端隔离(信号输入和信号输出)\n·高精度等级(0.1% F.S.)\n·高线性度(0.1% F.S.)\n·隔离电压(2KVAC/60s)\n·低纹波噪声(≤30mVpp (20MHz)\n·极低温漂(≤50PPM/℃，-40~+85℃范围内)\n·小体积: DIP18封装（26*9.5*12.5mm）\n·ESD防护(IEC/EN61000-4-2 Contact ±4KV perf.Criteria B)\n·信号负载能力: ≥2KΩ(信号输出为最大时@10V)\n;

Mornsun

金升阳

ACTIVE HIGH PRECISION AMPLIFIER

文件：1.09572 Mbytes 页数：5 Pages

MORNSUN

金升阳

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：431.87 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：431.87 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：431.85 Kbytes 页数：2 Pages

SUTEX