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TDA75610DLV	文件：2.40529 Mbytes Page：2 Pages	poweramplifiersmovingtothegreenzone	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
TDA75610DLVPD	文件：1.3399 Mbytes Page：37 Pages	4x45WdifferentialpoweramplifierwithfullI2Cdiagnostics,highefficiencyandlowvoltageoperation Features MultipowerBCDtechnology MOSFEToutputpowerstage DMOSpoweroutput Differentialinput ClassSBhighefficiency Highoutputpowercapability:4x25W/4Ω@ 14.4V,1kHz,10THD,4x45Wmaxpower FullI2Cbusdriving: –Standby –Independentfront/rearsoftplay	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
TDA75610DLVPDTR	文件：1.3399 Mbytes Page：37 Pages	4x45WdifferentialpoweramplifierwithfullI2Cdiagnostics,highefficiencyandlowvoltageoperation Features MultipowerBCDtechnology MOSFEToutputpowerstage DMOSpoweroutput Differentialinput ClassSBhighefficiency Highoutputpowercapability:4x25W/4Ω@ 14.4V,1kHz,10THD,4x45Wmaxpower FullI2Cbusdriving: –Standby –Independentfront/rearsoftplay	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
TDA75610LV	文件：2.40529 Mbytes Page：2 Pages	poweramplifiersmovingtothegreenzone	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
TDA75610SLV	文件：928.88 Kbytes Page：42 Pages	4x45WpoweramplifierwithfullI2Cdiagnostics,highefficiencyandlowvoltageoperation Features MultipowerBCDtechnology MOSFEToutputpowerstage DMOSpoweroutput Highefficiency(classSB) Highoutputpowercapability4x25W/4Ω@ 14.4V,1kHz,10THD,4x45Wmaxpower 2Ωdrivingcapability(64Wmaxpower) FullI2Cbusdriving: –Standby –Independen	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
TDA75610S-QLX	文件：928.88 Kbytes Page：42 Pages	4x45WpoweramplifierwithfullI2Cdiagnostics,highefficiencyandlowvoltageoperation Features MultipowerBCDtechnology MOSFEToutputpowerstage DMOSpoweroutput Highefficiency(classSB) Highoutputpowercapability4x25W/4Ω@ 14.4V,1kHz,10THD,4x45Wmaxpower 2Ωdrivingcapability(64Wmaxpower) FullI2Cbusdriving: –Standby –Independen	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
TDA75610S-ZST	文件：928.88 Kbytes Page：42 Pages	4x45WpoweramplifierwithfullI2Cdiagnostics,highefficiencyandlowvoltageoperation Features MultipowerBCDtechnology MOSFEToutputpowerstage DMOSpoweroutput Highefficiency(classSB) Highoutputpowercapability4x25W/4Ω@ 14.4V,1kHz,10THD,4x45Wmaxpower 2Ωdrivingcapability(64Wmaxpower) FullI2Cbusdriving: –Standby –Independen	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
TDA75610S-ZSX	文件：928.88 Kbytes Page：42 Pages	4x45WpoweramplifierwithfullI2Cdiagnostics,highefficiencyandlowvoltageoperation Features MultipowerBCDtechnology MOSFEToutputpowerstage DMOSpoweroutput Highefficiency(classSB) Highoutputpowercapability4x25W/4Ω@ 14.4V,1kHz,10THD,4x45Wmaxpower 2Ωdrivingcapability(64Wmaxpower) FullI2Cbusdriving: –Standby –Independen	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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