2 x 10-watt dual BTL class-D audio amplifier

Description The TDA7491P is a dual BTL class-D audio amplifier with single power supply designed for LCD TVs and monitors. Features ■ 10 W + 10 W continuous output power: RL= 6 Ω, THD = 10 at VCC = 11 V ■ 9.5 W + 9.5 W continuous output power: RL = 8 Ω, THD = 10 at VCC

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STMICROELECTRONICS

意法半导体

10W+10W双BTL D类音频放大器

The TDA7491P is a dual BTL class-D audio amplifier with single power supply designed for LCD TVs and monitors.\n\n Thanks to the high efficiency and exposed-pad-down (EPD) package no separate heatsink is required.\n\n Furthermore, the filterless operation allows a reduction in the external component • 10 W + 10 W continuous output power:RL= 6 Ω, THD = 10% at VCC = 11 V \n• 9.5 W + 9.5 W continuous output power:RL= 8 Ω, THD = 10% at VCC = 12 V \n• Wide range single supply operation (5 V - 18 V) \n• High efficiency (η = 90%) \n• Four selectable, fixed gain settings of nominally 20 dB,;

ST

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HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

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IRF

Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Appli

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ONSEMI

安森美半导体

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

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IRF