FDD3682

N-ChannelPowerTrenchMOSFET100V,32A,36m?

Features •rDS(ON)=32mΩ(Typ.),VGS=10V,ID=32A •Qg(tot)=18.5nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectur

FDD3682

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=40A RDS(ON)

FDD3682-NL

N-Channel100-V(D-S)MOSFET

FDP3682

iscN-ChannelMOSFETTransistor

FDP3682

STEREO200WCLASS-TDIGITALAUDIOAMPLIFIERDRIVERUSINGDIGITALPOWERPROCESSINGTECHNOLOGY

GENERALDESCRIPTION TheTK2150(TC2001/TP2150chipset)isatwo-channel,200W(6Ω)perchannelAmplifierDriverthatusesTripath’sproprietaryDigitalPowerProcessing(DPP™)technology.Class-TamplifiersofferboththeaudiofidelityofClass-ABandthepowerefficiencyofClass-Damplifiers. F

FDP3682

N-ChannelPowerTrenchMOSFET100V,32A,36m?

Features •rDS(ON)=32mΩ(Typ.),VGS=10V,ID=32A •Qg(tot)=18.5nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectur

FDS3682

N-ChannelPowerTrenchMOSFET100V,6A,35m?

Features •rDS(ON)=30mΩ(Typ.),VGS=10V,ID=6A •Qg(tot)=19nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse) Applications •DC/DCconvertersandOff-LineUPS •DistributedP

KDB3682

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=32mΩ(Typ.),VGS=10V,ID=32A ●Qg(tot)=18.5nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

LT3682

40V,1ASynchronousStep-DownConverter1AGuaranteedOutputCurrent

LT3682

HighEfficiency,65V500mASynchronous