Highest efficiency on smallest form factor

DrMOS 4.0 x 4.0 x 1.0 mm³ offers best-in-class efficiency and very low power loss. Infineon can deliver these benefits by combining its latest generation 25V OptiMOS™ 5 MOSFET technologies with its proven MOSFET driver silicon. A significant reduction of switching losses enables superior efficiency • Small 4.0 x 4.0 x 1.0mm³ PQFN package\n• Fast switching technology for improved performance at high switching frequency (> 500kHz)\n• Recommended input voltage 4.5V to 16V\n• Undervoltage lockout › Shoot through protection\n• 5V driver voltage optimized\n• Compatible with standard 3.3V PWM\n\n优势:\;

Infineon

英飞凌

Package：30-PowerTFQFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 全半桥驱动器 描述：IC POWERSTAGE DRIVER 30IQFN

Infineon

英飞凌

MICRO MODULE SHIELD SLOTTED BASE PLATE

文件：58.5 Kbytes 页数：1 Pages

Vicor

240 W, 1.8 - 2.3 GHz, GaN HEMT for WCDMA, LTE, WiMAX

Description Wolfspeed's CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications. The transistor is

文件：3.85944 Mbytes 页数：14 Pages

WOLFSPEED

240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

文件：1.7011 Mbytes 页数：15 Pages

Cree

科锐