TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

n THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS n CURRENT SENSE COMPARATOR n UNCOMMITTED OP-AMP n 0.6 A PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY n LOW OUTPUT IMPEDANCE TYP: 7W AT 200mA n CMOS/LSTTL COMPATIBLE INVERTING INPUT WITH HYSTERESIS n 4V TO 16V SINGLE SUPPLY OPERATION n L

文件：136.66 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

n THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS n CURRENT SENSE COMPARATOR n UNCOMMITTED OP-AMP n 0.6 A PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY n LOW OUTPUT IMPEDANCE TYP: 7W AT 200mA n CMOS/LSTTL COMPATIBLE INVERTING INPUT WITH HYSTERESIS n 4V TO 16V SINGLE SUPPLY OPERATION n L

文件：136.66 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

DESCRIPTION The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. ■ THREE POWER IGBT/MOS AND PULSE TRANSFORMER D

文件：138.79 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

DESCRIPTION The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. ■ THREE POWER IGBT/MOS AND PULSE TRANSFORMER D

文件：138.78 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Netz-Thyristor-Modul Phase Control Thyristor Module

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：418.74 Kbytes 页数：13 Pages

eupec

TRIPLE IGBT/MOS DRIVER

DESCRIPTION The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. ■ THREE POWER IGBT/MOS AND PULSE TRANSFORMER D

文件：82.34 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

文件：132.26 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

文件：132.26 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

可控硅/二极管模块

60 mm PowerBLOCK 相位控制晶闸管/二极管模块使用绝缘铜基板，采用高可靠性压接技术设计和组装。 • 具有高可靠性的压接技术\n• 工业标准封装\n• 电绝缘基板\n• 故障时短路\n• 具有高稳健性\n\n优势:\n• 故障保护\n• 防止电弧失效\n• 易于安装\n• 由于高过载能力，可实现无熔丝设计\n• UL 认证;

Infineon

英飞凌

可控硅/二极管模块

60 mm PowerBLOCK 相位控制晶闸管/二极管模块使用绝缘铜基板，采用高可靠性压接技术设计和组装。 • 具有高可靠性的压接技术\n• 工业标准封装\n• 电绝缘基板\n• 故障时短路\n• 具有高稳健性\n\n优势:\n• 故障保护\n• 防止电弧失效\n• 易于安装\n• 由于高过载能力，可实现无熔丝设计\n• UL 认证;

Infineon

英飞凌