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TangCheng

汤诚科技

1.2mm Discrete HFET

DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with

文件：178.77 Kbytes 页数：7 Pages

TriQuint

1.2mm Discrete HFET

DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with

文件：178.77 Kbytes 页数：7 Pages

TriQuint

DC - 12 GHz Discrete HFET

Description The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond-pad and backside metalization is gold plated for compatibility with e

文件：221.41 Kbytes 页数：9 Pages

TriQuint