TCR3RM32A中文资料东芝数据手册PDF规格书

特性 Features

Ultra small package DFN4C/DFN4F (1.0 mm x 1.0 mm; t 0.38 mm (Typ.)).

High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V)

High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V)

High Ripple rejection ratio 68 dB (Typ.) @100 kHz (VOUT = 2.8 V)

High Ripple rejection ratio 68 dB (Typ.) @1 MHz (VOUT = 2.8 V)

Low output noise voltage (VNO = 5 μVrms (Typ.) at 10 Hz ≤ f ≤ 100 kHz)

Low quiescent current (IB = 7 μA (Typ.) at IOUT = 0 mA)

Overcurrent protection

Thermal shutdown

Auto-discharge

Low Dropout voltage

VDO = 130 mV (Typ.), VOUT = 2.8 V, IOUT = 300 mA

Wide range output voltage line up (VOUT = 0.9 to 4.5 V)

Pull down connection between CONTROL and GND

Ceramic capacitors can be used (CIN = 1 μF, COUT =1 μF)