TCR3DM18A中文资料东芝数据手册PDF规格书

厂商型号	TCR3DM18A
功能描述	TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
丝印标识	1P8
封装外壳	DFN4D
文件大小	749.18 Kbytes
页面数量	20 页
生产厂商	TOSHIBA
中文名称	东芝
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-3 23:00:00
人工找货	TCR3DM18A价格和库存，欢迎联系客服免费人工找货

特性 Features

Ultra small packag e DFN4D (1.0 mm x 1.0 mm; t 0.3 7 mm (typ.))

Wide range output voltage line up (V OUT = 1.0 to 4.5 V)

L ow dropout voltage

DO = 175 mV (typ.) at 3.3 V output, I OUT = 300 mA

DO = 21 6 mV (typ.) at 2.5 V output, I OUT = 300 mA

DO = 2 9 7 mV (typ.) at 1.8 V output, I OUT = 300 mA

Low output noise voltage (V NO = 38 μ V rms t yp.) at 10Hz ≤ f ≤ 100kHz)

High ripple rejection ratio (72 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz)

Fast load transient response (±80 mV (typ.) at 2.5 V output, IOUT = 1 mA ⇔ 300 mA)

Overcurrent protection

Thermal shutdown

Inrush current protection circuit

Auto discharge

Pull down connection between CONTROL and GND

Ceramic capacitors can be used (C IN = 1 .0 μ F, C OUT = 1 .0 μ F)