TCET1112G中文资料威世科技数据手册PDF规格书

Description

The TCET111.(G) consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The elements are mounted on one lead frame using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Features

• CTR offered in 9 Groups

• Isolation materials according to UL94-VO

• Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)

• Climatic classification 55/100/21 (IEC 68 part 1)

• Special construction:

   Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection

• Low temperature coefficient of CTR

• Temperature range - 40 to + 110 °C

• Coupling System U

• Rated impulse voltage (transient overvoltage) VIOTM= 8 kVpeak

• Isolation test voltage (partial discharge test voltage) Vpd= 1.6 kV

• Rated isolation voltage (RMS includes DC) VIOWM= 600 VRMS(848 Vpeak)

• Rated recurring peak voltage (repetitive) VIORM= 600 VRMS

• Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI ≥175

• Thickness through insulation ≥0.75 mm

• Internal creepage distance > 4 mm

• External creepage distance > 8 mm

Applications

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

• For appl. class I - IV at mains voltage ≤300 V

• For appl. class I - III at mains voltage ≤600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface, with operating temperature up to 110°C