TCET1100G_V01中文资料威世科技数据手册PDF规格书

DESCRIPTION

The TCET110. consists of a phototransistor optically

coupled to a gallium arsenide infrared-emitting diode in a

4-lead plastic dual inline package.

FEATURES

• High common mode rejection

• Low temperature coefficient of CTR

• CTR offered in 7 groups

• Reinforced isolation provides circuit

protection against electrical shock (safety

class II)

• Isolation materials according to UL 94 V-0

• Pollution degree 2 (DIN / VDE 0110 / resp. IEC 60664)

• Climatic classification 55 / 100 / 21 (IEC 60068 part 1)

• Rated impulse voltage (transient overvoltage)

VIOTM = 6 kVpeak

• Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV

• Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

• Rated recurring peak voltage (repetitive)

VIORM = 848 Vpeak

• Creepage current resistance according to VDE 0303 /

IEC 60112 comparative tracking index: CTI ≥ 175

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Circuits for safe protective separation against electrical

shock according to safety class II (reinforced isolation):

• For application class I to IV at mains voltage ≤ 300 V

• For application class I to III at mains voltage ≤ 600 V

according to DIN EN 60747-5-5 (VDE 0884), suitable for:

- Switch-mode power supplies

- Line receiver

- Computer peripheral interface

- Microprocessor system interface