TCED2100_V02中文资料威世数据手册PDF规格书

DESCRIPTION

The TCED2100/TCED4100 consists of a phototransistor

optically coupled to a gallium arsenide infrared-emitting

diode in a 8-pin (dual) or 16-pin (quad) plastic dual inline

package.

The elements are mounted on one leadframe providing a

fixed distance between input and output for highest safety

requirements.

FEATURES

• Isolation materials according to UL94-VO

• Pollution degree 2 (DIN/VDE 0110/resp. IEC

60664)

• Climatic classification 55/100/21 (IEC 60068

part 1)

• Special construction: therefore, extra low

coupling capacity of typical 0.2 pF, high common

mode rejection

• Low temperature coefficient of CTR

• Creepage current resistance according to VDE 0303/

IEC 60112 comparative tracking index: CTI ≥ 175

• Rated impulse voltage (transient overvoltage)

VIOTM = 8 kV peak

• Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV peak

• Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

• Rated recurring peak voltage (repetitive)

VIORM = 848 V peak

• Thickness though insulation ≥ 0.75 mm

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and

WEEE 2002/96/EC