2-INPUT NAND GATE

2-Input NAND Gate Features • High Speed : tpd = 7ns (Typ.) at VCC = 5 V • Low power dissipation : ICC = 1 μA (Max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28 VCC (min) • Output drive capability : 5 LSTTL Loads • Symmetrical Output Impedance : |IOH| = IOL= 2mA (min)

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TOSHIBA

东芝

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

文件：212.45 Kbytes 页数：7 Pages

TOSHIBA

东芝

L-MOS high-speed series

Function：Single 2-Input NAND Gate\nFunction1：Gate\nFunction2：NAND\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国

Toshiba

东芝

Package：5-TSSOP，SC-70-5，SOT-353；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 1CH 2-INP USV

Toshiba Semiconductor and Storage