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74VHC08

Quad2-InputANDGate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

74VHC08

QUAD2-INPUTANDGATE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC08

QUAD2-INPUTANDGATE

DESCRIPTION The74VHC08isanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. Theinternalcircuitiscomposedof2stagesincludingbufferoutput,whichprovideshighnoiseimmunityandstableoutput. ■HIGH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC08

Quad2-InputANDGate

GeneralDescription The74VHC/VHCT08isanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■Highnoiseimmunity:

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

74VHC08

QUAD2-INPUTANDGATE

DESCRIPTION The74VHC08isanadvancedhigh-speedCMOSQUAD2-INPUTANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. Theinternalcircuitiscomposedof2stagesincludingbufferoutput,whichprovideshighnoiseimmunityandstableoutput. ■HIGH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC08

Quad2-InputANDGate

GeneralDescription TheVHC08isanadvancedhighspeedCMOS2InputANDGatefabricatedwithsilicongateCMOStechnology.Itachievesthehigh-speedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Features ■HighSpeed:tPD=4.3ns(Typ.)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

74VHC08

Quad2-inputANDgate

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

74VHC08

Quad2-InputANDGate

GeneralDescription TheVHC08isanadvancedhighspeedCMOS2InputANDGate fabricatedwithsilicongateCMOStechnology.Itachievesthe high−speedoperationsimilartoequivalentBipolarSchottkyTTL whilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposedof4s

ONSEMION Semiconductor

安森美半导体安森美半导体公司

74VHC08BQ

Quad2-inputANDgate

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

74VHC08D

Quad2-inputANDgate

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

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