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74VHC05

HEXINVERTEROPENDRAIN

DESCRIPTION The74VHC05isanadvancedhigh-speedCMOSOPENDRAINHEXINVERTERfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=3.8ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION: ICC=2µA(MAX.)atTA=25°C ■HIGHNOISEIMMUN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC05

HEXINVERTER(OPENDRAIN)

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC05FT

CMOSDigitalIntegratedCircuitsSiliconMonolithic

FunctionalDescription •HexInverter(OpenDrain) General The74VHC05FTisanadvancedhighspeedCMOSINVERTERfabricatedwithsilicongateC2MOStechnology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOS lowpowerdissipation.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

74VHC05M

HEXINVERTEROPENDRAIN

DESCRIPTION The74VHC05isanadvancedhigh-speedCMOSOPENDRAINHEXINVERTERfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=3.8ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION: ICC=2µA(MAX.)atTA=25°C ■HIGHNOISEIMMUN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC05MTR

HEXINVERTER(OPENDRAIN)

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC05T

HEXINVERTEROPENDRAIN

DESCRIPTION The74VHC05isanadvancedhigh-speedCMOSOPENDRAINHEXINVERTERfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=3.8ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION: ICC=2µA(MAX.)atTA=25°C ■HIGHNOISEIMMUN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC05TTR

HEXINVERTER(OPENDRAIN)

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TC74VHC05F

HexInverter(opendrain)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74VHC05F

HEXINVERTER(OPENDRAIN)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74VHC05FK

HexInverter(opendrain)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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