TC74ACT640F中文资料东芝数据手册PDF规格书

DESCRIPTION

The TC51WHM516AXBN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high speed and low power. The device operates single power supply. The device also features SRAM-like W/R timing whereby the device is controlled by CE1 , OE , and WE on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power standby.

FEATURES

• Organized as 2,097,152 words by 16 bits

• Single power supply voltage of 2.6 to 3.3 V

• Direct TTL compatibility for all inputs and outputs

• Deep power-down mode: Memory cell data invalid

• Page operation mode: Page read operation by 8 words

• Logic compatible with SRAM R/W ( WE ) pin

• Standby current

Standby 70 µA

Deep power-down standby 5 µA