TGP-651

ThermoHarvestingWirelessSensorSystem

TK651XX

STEP-UPVOLTAGECONVERTERWITHVOLTAGEMONITOR

DESCRIPTION TheTK651xxlowpowerstep-upDC-DCconverterisdesignedforportablebatterypoweredsystems,capableofoperatingfromasinglebatterycelldownto0.9V.TheTK651xxprovidesthepowerswitchandthecontrolcircuitforaboostconverter.TheconvertertakesaDCinputandboosts

TLP651

DIGITALLOGICGROUNDISOLATIONLINERECEIVER

DigitalLogicGroundIsolation LineReceiver MicroprocessorSystemInterfaces SwitchingPowerSupplyFeedbackControl AnalogSignalIsolation TheTOSHIBATLP651consistsofaGaAℓAshigh−outputlightemittingdiodeandahighspeeddetectorofonechipphotodiode−transistor.Thisunitis8

TLP651

MicroprocessorSystemInterfaces

TPC-651T

5.7/6.5VGATFTLEDLCDThin-ClientTerminalwithIntel®Atom™Processor

Features ƒIndustrial-grade5.7/6.5VGATFTLCDwith50KlifetimeandLEDbacklight ƒIntel®Atom™E38271.75GHzdual-coreprocessorwith4GBDDR3LSDRAM ƒCompact,fanlessembeddedsystemwithaluminumalloyfrontbezel ƒWideoperatingtemperaturerange-20~60°C(-4~140°F) ƒTrue-fl

U651

LINEARINTEGRATEDCIRCUIT

UPA651TT

P-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDevices -CellularPhone -DSC -PortableGameConsole -MP3 -GPS

UPA651TT

P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING

DESCRIPTION TheµPA651TTisaswitchingdevice,whichcanbedrivendirectlybya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •1.8Vdr

UPA651TT

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING FEATURES •1.8Vdriveavailable •Lowon-stateresistance RDS(on)1=69mΩMAX.(VGS=−4.5V,ID=−2.5A) RDS(on)2=88mΩMAX.(VGS=−2.5V,ID=−2.5A) RDS(on)3=142mΩMAX.(VGS=−1.8V,ID=−1.5A)

US651

Two-CoilLowNoiseFanDriver