MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

DESCRIPTION The device is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u32 pages u4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between t

文件：448.35 Kbytes 页数：44 Pages

TOSHIBA

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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

512-MBIT (64M u 8 BITS) CMOS NAND E2PROM DESCRIPTION The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static register which allows program

文件：449.08 Kbytes 页数：44 Pages

TOSHIBA

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MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba

东芝

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba

东芝