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CXK58512M

65536-wordX8-bitHighSpeedCMOSStaticRAM

Description TheCXK58512TM/MisahighspeedCMOSstaticRAMorganizedas65536-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeed. TheCXK58512TM/Misasuitable

SonySony Semiconductor Solutions Group

索尼

CXK58512TM

65536-wordX8-bitHighSpeedCMOSStaticRAM

Description TheCXK58512TM/MisahighspeedCMOSstaticRAMorganizedas65536-wordsby8bits. ApolysiliconTFTcelltechnologyrealizedextremelylowstand-bycurrentandhigherdataretentionstability. Specialfeaturearelowpowerconsumption,highspeed. TheCXK58512TM/Misasuitable

SonySony Semiconductor Solutions Group

索尼

TC58512FT

TENTATIVETOSHIBAMOSDIGITALINTEGRATEDCIRCUITSILICONGATECMOS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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