131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM

Description The TC55BSB125J is a 1,048,576 bit synchronous static random access memory fabricated using BICMOS technology and organized as 131,072 words by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and does not have the write-cycle pass-through feature.

文件：300.78 Kbytes 页数：6 Pages

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131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM

Description The TC55BSB125J is a 1,048,576 bit synchronous static random access memory fabricated using BICMOS technology and organized as 131,072 words by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and does not have the write-cycle pass-through feature.

文件：300.78 Kbytes 页数：6 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM

Description The TC55BSB125J is a 1,048,576 bit synchronous static random access memory fabricated using BICMOS technology and organized as 131,072 words by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and does not have the write-cycle pass-through feature.

文件：300.78 Kbytes 页数：6 Pages

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TSOP48

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TSSOP48

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上传：深圳市恒达亿科技有限公司