262,144 WORD x 4 BIT BICMOS STATIC RAM

Description The TC55B4257J is a 1,048,576 bit high speed BICMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation. The TC55B4257J features low power dissipati

文件：314.72 Kbytes 页数：6 Pages

TOSHIBA

东芝

262,144 WORD x 4 BIT BICMOS STATIC RAM

Description The TC55B4257J is a 1,048,576 bit high speed BICMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation. The TC55B4257J features low power dissipati

文件：314.72 Kbytes 页数：6 Pages

TOSHIBA

东芝

262,144 WORD x 4 BIT BICMOS STATIC RAM

Description The TC55B4257J is a 1,048,576 bit high speed BICMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation. The TC55B4257J features low power dissipati

文件：314.72 Kbytes 页数：6 Pages

TOSHIBA

东芝

262,144 WORD x 4 BIT BICMOS STATIC RAM

Description The TC55B4257J is a 1,048,576 bit high speed BICMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation. The TC55B4257J features low power dissipati

文件：314.72 Kbytes 页数：6 Pages

TOSHIBA

东芝