32,768 WORD x 9 BIT BICMOS STATIC RAM

Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation. The TC55B329P/J features low power dissipatio

文件：389.71 Kbytes 页数：7 Pages

TOSHIBA

东芝

32,768 WORD x 9 BIT BICMOS STATIC RAM

Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation. The TC55B329P/J features low power dissipatio

文件：389.71 Kbytes 页数：7 Pages

TOSHIBA

东芝

32,768 WORD x 9 BIT BICMOS STATIC RAM

Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation. The TC55B329P/J features low power dissipatio

文件：389.71 Kbytes 页数：7 Pages

TOSHIBA

东芝

32,768 WORD x 9 BIT BICMOS STATIC RAM

Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation. The TC55B329P/J features low power dissipatio

文件：389.71 Kbytes 页数：7 Pages

TOSHIBA

东芝