32,768 WORD x 8 BIT STATIC RAM

Description The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle

文件：393.52 Kbytes 页数：7 Pages

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东芝

SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM

文件：385.7 Kbytes 页数：7 Pages

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东芝

32,768 WORD x 8 BIT STATIC RAM

Description The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle

文件：393.52 Kbytes 页数：7 Pages

TOSHIBA

东芝

32,768 WORD x 8 BIT STATIC RAM

Description The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle

文件：393.52 Kbytes 页数：7 Pages

TOSHIBA

东芝

32,768 WORD x 8 BIT STATIC RAM

Description The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle

文件：393.52 Kbytes 页数：7 Pages

TOSHIBA

东芝

SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM

文件：385.7 Kbytes 页数：7 Pages

TOSHIBA

东芝

SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM

文件：385.7 Kbytes 页数：7 Pages

TOSHIBA

东芝

SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM

文件：385.7 Kbytes 页数：7 Pages

TOSHIBA

东芝