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TC55257BPL-10

SILICONGATECMOS32,768WORDX8BITSTATICRAM

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC55257BPL-10L

SILICONGATECMOS32,768WORDX8BITSTATICRAM

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC55257BPL-10LT

32,768WORDx8BITSTATICRAM

Description TheTC55257BPLisa262,144bitCMOSstaticrandomaccessmemoryorganizedas32,768wordsby8bitsandoperatedfroma single5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcurrentof 5mNMHz(typ.)andaminimumcycle

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC55257BPL-10LV

32,768WORDx8BITSTATICRAM

Description TheTC55257BPLisa262,144bitCMOSstaticrandomaccessmemoryorganizedas32,768wordsby8bitsandoperatedfroma single5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcurrentof 5mNMHz(typ.)andaminimumcycle

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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