65,536 WORD x 16 BIT CMOS STATIC RAM

Description The TC551664J is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551664J features low power dissipation whe

文件：394.43 Kbytes 页数：7 Pages

TOSHIBA

东芝

65,536 WORD x 16 BIT CMOS STATIC RAM

Description The TC551664J is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551664J features low power dissipation whe

文件：394.43 Kbytes 页数：7 Pages

TOSHIBA

东芝

65,536 WORD x 16 BIT CMOS STATIC RAM

Description The TC551664J is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551664J features low power dissipation whe

文件：394.43 Kbytes 页数：7 Pages

TOSHIBA

东芝

65,536 WORD x 16 BIT CMOS STATIC RAM

Description The TC551664J is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The TC551664J features low power dissipation whe

文件：394.43 Kbytes 页数：7 Pages

TOSHIBA

东芝