首页 >TC518512FTL-10DR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TC518512FTL-10DR | 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PLisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC518512PLutilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,.!J!ghspeedandlowpowerstorage.The TC518512PLoperatesfroma | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | |
524,288WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518512PLisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC518512PLutilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518512PLoperatesfromas | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
524,288WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518512PLisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC518512PLutilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,.b!ghspeedandlowpowerstorage.The TC518512PLoperatesfroma | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
524,288WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518512PLisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC518512PL utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC518512PL-LVoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSH |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势 |
询价 | ||
TOSHIBA |
2023+ |
3000 |
进口原装现货 |
询价 | |||
24+ |
2500 |
自己现货 |
询价 | ||||
TOSHIBA |
23+ |
原厂封装 |
9526 |
询价 | |||
TOSHIBA |
06+ |
SOP |
1000 |
全新原装 绝对有货 |
询价 | ||
TOSHIBA |
11+ |
TSOP |
8000 |
全新原装,绝对正品现货供应 |
询价 | ||
TOSHIBA |
24+ |
TSSOP |
6868 |
原装现货,可开13%税票 |
询价 | ||
TOSHIBA |
20+ |
1562 |
全新现货热卖中欢迎查询 |
询价 | |||
TOSHIBA |
24+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
TOSHIBA |
20+ |
TSOP |
2960 |
诚信交易大量库存现货 |
询价 |
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