TC51832APL-10中文资料东芝数据手册PDF规格书

Description

The TC51832AP is a 256K bit high speed CMOS pseudo static RAM organized as 32,768 words by 8 bits. The TC51832AP utilizes

a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The

TC51832AP operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of

refreshing - auto refresh and self refresh. The TC51832AP features a static RAM-like interface with a write cycle in which the input

data is written into the memory cell at the rising edge of RW thus simplifying the microprocessor interface.

The TC51832AP is pin-compatible with the 256K bit CMOS static RAM JEDEC standard and is available in a 28-pin, 0.6 inch

and 0.3 inch width plastic DIP, and a small outline plastic flat package.

Features

• Organization: 32,768 words x 8 bits

• Single 5V power supply

• Fast access time

tCEA CE Access Time

TOEA OE Access Time

tac Cycle Time

Power Dissipation

Self Refresh Current

-70

70ns

30ns

115ns

385mW

TC51832A Family

- TC51832AP/APL

TC51832ASP/ASPL

TC51832AF/AFL

-85

85ns

35ns

135ns

303mW

1mA/100μA

Self refresh is supported by an internal timer

• Inputs and outputs TTL compatible

• Auto refresh is supported by an internal refresh address

counter

• Refresh: 256 refresh cycles/4ms

• Pin compatible: 256K SRAM (JEDEC)

• Package

-10

100ns

40ns

: DIP28-P-600

: DIP28-P-300B

: SOP28-P-450

160ns

248mW