131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing

文件：301.04 Kbytes 页数：9 Pages

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131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr

文件：376.41 Kbytes 页数：14 Pages

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东芝

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing

文件：301.04 Kbytes 页数：9 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr

文件：376.41 Kbytes 页数：14 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing

文件：301.04 Kbytes 页数：9 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr

文件：376.41 Kbytes 页数：14 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing

文件：301.04 Kbytes 页数：9 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr

文件：376.41 Kbytes 页数：14 Pages

TOSHIBA

东芝