TC518129AFL-80LV中文资料东芝数据手册PDF规格书

描述 Description

The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV

utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power

storage. The TC518129A-LV operates from a single power supply of 3.135V-5.5V. Refreshing is supported by a refresh (RFSH)

input which enables two types of refreshing - auto refresh and self refresh. The TC518129A-LV features a static RAM-like interface

with a write cycle in which the input data is written into the memory cell at the rising edge of R/W thus simplifying the microproces-

sor interface.

ACS standby mode interfacx: is incorporated in the TC518129A-LV family, with the CE2 pin in the TC518128A-LV family changed

to a CS pin. The TC518129A-LV s available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a 32-pin

thin small outline plastic package (forward type).

特性 Features

• Organization:

131,072 words x 8 bits

• Low voltage operation:

3.135V-5.5V

• Data retention supply voltage: 3.0V ~ 5.5V

• Fast access time

ICEA CE Access Time

LOEA OE Access Time

IRC Cycle Time

Power Dissipation

Self Refresh Current

5.5V

3.0V

TC518129A-LV Family

-10

100ns

40ns

-80

80ns

35ns

130ns

385mW

- TC518129APL: DIP32-P-600

- TC518129AFL: SOP32-P-450

160ns

330mW

TC518129AFWL: SOP32-P-525

- TC518129AFTL: TSOP32-P-0820

200μA

100μA

• Auto refresh is supported by an internal refresh address counter

• Self refresh is supported by an internal timer

• Inputs and outputs TTL compatible

• Refresh: 512 refresh cycles/8ins

• Auto refresh power down feature

• Package

-12

120ns

50ns

190ns

275mW