首页 >TC518128FWL/AFL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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