首页 >TC518128CPL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TC518128CPL | 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | |
131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA |
详细参数
- 型号：
TC518128CPL
- 制造商：
TOSHIBA
- 功能描述：
*
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
11+ |
DIP |
8000 |
全新原装,绝对正品现货供应 |
询价 | ||
TOSHIBA |
23+ |
N/A |
9526 |
询价 | |||
TOSHIBA |
2020+ |
DIP-32 |
1000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
2500 |
自己现货 |
询价 | |||||
TOSHIBA |
24+ |
DIP |
6868 |
原装现货,可开13%税票 |
询价 | ||
TOSHIBA |
22+ |
PDIP-32 |
8200 |
原装现货库存.价格优势 |
询价 | ||
TOS |
22+ |
DIP-32 |
2800 |
原装现货!可长期供货! |
询价 | ||
TOSHIBA |
23+ |
DIP-32 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
TOS |
1844+ |
DIP-32 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
TOSHIBA |
2020+ |
DIP-32 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
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相关库存
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- TC53257
