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TC518128CFWL

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128CFWL-10

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128CFWL-10L

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128CFWL-70

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128CFWL-70L

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128CFWL-80

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128CFWL-80L

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION TheTC518128CPL/CSPL/CFL/CFWL/CFTLisa1,048,578-bitCMOSpseudostaticrandomaccessmemory (PSRAM)organizedas131,072wordsby8bits.Itfeatureaone-transistordynamicmemorycellusingCMOS peripheralcircuitrytoprovidelargecapacity,highspeedandlowpower.Itusesa

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

MSM518128

131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM518128L

131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM518128L-XXJS

131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM518128-XXJS

131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

TC518128AF

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128AFL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128AFTL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128AFW

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128AFWL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128AP

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128APL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128ASP

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC518128ASPL

131,072WORDx8BITCMOSPSEUDOSTATICRAM

Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

供应商型号品牌批号封装库存备注价格
TOSHIBA
23+
SOP32
9526
询价
TOSHIBA
2016+
SOP
8880
只做原装,假一罚十,公司可开17%增值税发票!
询价
TOS
05+
原厂原装
12051
只做全新原装真实现货供应
询价
TOS
1998
402
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
TOSHBA
22+
SOP
7500
十年品牌!原装现货!!!
询价
TOSHIBA
23+
SOP32
5000
原装正品,假一罚十
询价
TOSHIBA
2339+
SOP
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
TOSHIBA
9640+
SOP32
125
询价
TOSHIBA
9640+
SOP32
125
现货原装库存热卖
询价
TOS
22+
SOP
6868
原装现货,可开13%税票
询价
更多TC518128CFWL供应商 更新时间2024-6-7 16:54:00