4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. M

文件：1.10914 Mbytes 页数：21 Pages

TOSHIBA

东芝

4,194,304 WORD X 4 BIT DYNAMIC RAM

Toshiba

东芝

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

文件：568.08 Kbytes 页数：8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5117400C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

文件：478.54 Kbytes 页数：17 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

4,194,304-Word 횞 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5117400D is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal

文件：160.7 Kbytes 页数：14 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社