TC4422中文资料9 A MOSFET Gate Driver数据手册Microchip规格书

描述 Description

The TC4421/4422 are high current buffer/gate drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms.

特性 Features

Tough CMOS™ Construction
High Peak Output Current: 9 A
High Continuous Output Current: 2 A Max
30 ns with 4,700 pF Load
180 ns with 47,000 pF Load
Short Internal Delays: 30 ns (Typical)
Low Output Impedance: 1.4 Ω (Typical)

简介

TC4422属于集成电路（IC）的栅极驱动器。由制造生产的TC4422栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。