Low Noise and High Dynamic Range Packaged GaAs FETs

DESCRIPTION The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 DC teste

文件：284.88 Kbytes 页数：4 Pages

TRANSCOM

全讯科技

Low Noise and High Dynamic Range Packaged GaAs FETs

[TRANSCOM] DESCRIPTION The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 1

文件：140.9 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Noise Ceramic Packaged PHEMT GaAs FETs

[TRANSCOM, INC.] DESCRIPTION The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with TC1102 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices

文件：104.37 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Noise Ceramic Packaged PHEMT GaAs FETs

DESCRIPTION The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with TC1102 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 DC teste

文件：227.21 Kbytes 页数：3 Pages

TRANSCOM

全讯科技

50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

文件：362.49 Kbytes 页数：18 Pages

Microchip

微芯科技

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

文件：371.02 Kbytes 页数：20 Pages

Microchip

微芯科技

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

文件：371.02 Kbytes 页数：20 Pages

Microchip

微芯科技

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

文件：371.02 Kbytes 页数：20 Pages

Microchip

微芯科技

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

文件：371.02 Kbytes 页数：20 Pages

Microchip

微芯科技

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

文件：371.02 Kbytes 页数：20 Pages

Microchip

微芯科技