1N914

SMALLSIGNALDIODE

FEATURES ♦SiliconEpitaxialPlanarDiode ♦Forgeneralpurposeandswitching.

1N914

SMALLSIGNALSWITCHINGDIODE

FEATURES •Siliconepitaxialplanardiode •Fastswithchingdiodes •1N4149,1N4447,1N4449arealsoavaibleinglasscaseDO-34

1N914

High-speeddiode

DESCRIPTION The1N914isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedinahermeticallysealedleadedglassSOD27(DO-35)package. FEATURES •HermeticallysealedleadedglassSOD27(DO-35)package •Highswitchingspeed:max.4ns •Continuousreversevoltage

1N914

COMPUTERDIODESwitching

1N914

DiodeData

1N914

PERFORMANCESPECIFICATION

SCOPE Scope.Thisspecificationcoverstheperformancerequirementsforsilicon,diffused,switchingdiodes.ThreelevelsofproductassuranceareprovidedforeachdevicetypeasspecifiedinMIL-PRF-19500.Twolevelsofproductassuranceareprovidedforeachunencapsulateddevice.

1N914

500mW100VoltSiliconEpitaxialDiodes

Features •MoistureSensitivityLevel1 •LowCurrentLeakage •CompressionBondConstruction •LowCost •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation)

1N914

FASTSWITCHINGDIODES

Features •FastSwitchingSpeed •HighReliability

1N914

SMALLSIGNALSWITCHINGDIODE

REVERSEVOLTAGE:75VCURRENT：75mA FEATURES ◇Glasssealedenvelope.(MSD) ◇VRM=100Vguaranteed ◇Highreliability

1N914

FASTSWITCHINGDIODE

FEATURES ●Highreliability ●Highconductance ●Fastswitchingspeed(trr≤4ns) APPLICATIONS ●Forgeneralpurposeswichingapplications