首页 >TC1428VPA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
THVD14283.3-Vto5-VRS-485Transceiverwith3-kVSurgeProtection | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
THVD14283.3-Vto5-VRS-485Transceiverwith3-kVSurgeProtection | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Low-Loss140.00MHzIFSAWFilter/28.0MHzBandwidth | Transko Transko Electronics, Inc. | Transko | ||
CrystalUnitSMD3.2x2.513.3148MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
NPNSILICONPOWERTRANSISTORARRAYHIGHSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheµPA1428AisNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorber4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES •SurgeAbsorberbuiltin. •Easymountby0.1inchofterminalinterval. •HighhFEforDarlingtonTransi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONTRANSISTORARRAY NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SILICONTRANSISTORARRAY NPNSILICONPOWERTRANSISTORARRAY HIGHSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSILICONPOWERTRANSISTORARRAYHIGHSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheµPA1428AisNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorber4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES •SurgeAbsorberbuiltin. •Easymountby0.1inchofterminalinterval. •HighhFEforDarlingtonTransi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NPNSILICONPOWERTRANSISTORARRAYHIGHSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheµPA1428AisNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltinSurgeAbsorber4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES •SurgeAbsorberbuiltin. •Easymountby0.1inchofterminalinterval. •HighhFEforDarlingtonTransi | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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