Dual 1.2 A MOSFET Gate Driver

The TC1426/27/28 are a family of 1.2 A dual high-speed gate drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorpora Latch-Up Protected: Will Withstand\nESD Protected: ±2 kV\nHigh Capacitive Load Drive Capability: 1000 pF in 38 ns\nWide Operating Range: 4.5 V to 16 V\nLow Delay Time: 75 ns\nLogic Input Threshold Independent of Supply Voltage\nOutput Voltage Swing to Within 25 mV of Ground or VDD\nLow Output Impeda;

Microchip

微芯科技

Dual 1.2 A MOSFET Gate Driver

The TC1426/27/28 are a family of 1.2 A dual high- speed gate drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorpor Latch-Up Protected: Will Withstand\n500 mA Reverse Output Current\nESD Protected: ±2 kV\nHigh Capacitive Load Drive Capability: 1,000 pF in 38 ns\nWide Operating Range: 4.5 V to 16 V\nLow Delay Time: 75 ns Max\nLogic Input Threshold Independent of Supply Voltage\nOutput Voltage Swing to Within 25 mV;

Microchip

微芯科技

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR LOW-SIDE 8SOIC

MICROCHIP

微芯科技

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR LOW-SIDE 8SOIC

MICROCHIP

微芯科技

Package：8-DIP（0.300"，7.62mm）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR LOW-SIDE 8DIP

MICROCHIP

微芯科技