TC1412N中文资料2 A MOSFET Gate Driver数据手册Microchip规格书

描述 Description

The TC1412/1412N are 2 A CMOS buffer/gate drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1412/1412N can easily switch 1000pF gate capacitance in 18 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy.

特性 Features

Latch-Up Protected: Will Withstands 500 mA Reverse Current
Input Withstands Negative Inputs Up to 5 V
Wide Operating Range: 4.5 V to 16 V
High Capacitive Load Drive Capability: 1,000 pF in 18 ns
Short Delay Time: 35 ns (Typical)
Consistent Delay Times With Changes in Supply Voltage
Matched Delay Times
With Logic ''1'' Input: 500 µA
With Logic ''0'' Input: 100 µA
Low Output Impedance: 4 Ω
Pinout Same as TC1410/11/13

简介

TC1412N属于集成电路（IC）的栅极驱动器。由制造生产的TC1412N栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。