0.5 W High Linearity and High Efficiency GaAs Power FETs

DESCRIPTION The TC1401N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and high Power Added Efficiency. The device has no via holes in the source pads. The short gate length characteristic enables the device to be used in a circuit up to 20GHz. All dev

文件：175.97 Kbytes 页数：5 Pages

TRANSCOM

全讯科技

FET Chip

Transcom

全讯科技

Molded, Dual-In-Line Resistor Networks

文件：260.899 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

Transient Diverting Supressor 1-Line, 14V SurgeSwitch™ EOS Protection

Description Semtech SurgeSwitch™ Transient Diverting Suppressors (TDS) are designed to provide protection from Electrical Overstress (EOS) events. They have superior clamping and temperature characteristics when compared to standard TVS devices. The device uses a surge rated FET as the main

文件：1.00931 Mbytes 页数：9 Pages

SEMTECH

先之科

Transient Diverting Supressor 1-Line, 14V SurgeSwitch™ EOS Protection

Description Semtech SurgeSwitch™ Transient Diverting Suppressors (TDS) are designed to provide protection from Electrical Overstress (EOS) events. They have superior clamping and temperature characteristics when compared to standard TVS devices. The device uses a surge rated FET as the main

文件：1.00931 Mbytes 页数：9 Pages

SEMTECH

先之科