TIP102

POWERTRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

TIP102

NPNSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP105,TIP106andTIP107 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

TIP102

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP102isasiliconEpitaxial-BaseNPNpowertransistorinmonolithicDarlingtonconfigurationmountedinTO-220plasticpackage.Itisintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypeisTIP107. AlsoTIP105isaPNPtype. ■STMicroelectro

TIP102

PowerDarlingtonsforLinearandSwitchingApplications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

TIP102

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

•MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@Vce=4V,Ic=3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP105/106/107

TIP102

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

TIP102

PlasticMedium?뭁owerComplementarySiliconTransistors

TIP102

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

TIP102

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A =2.5V

TIP102

TO-220-PowerTransistorsandDarlingtons