NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

文件：224.14 Kbytes 页数：6 Pages

TACHYONICS

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

文件：224.14 Kbytes 页数：6 Pages

TACHYONICS

Si NPN Transistor

□ Features - High gain bandwidth product fT= 6 GHz at VCE = 3 V, IC = 10 mA fT= 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - VHF and UHF

文件：213.16 Kbytes 页数：5 Pages

AUK

NPN SILICON RF TRANSISTOR

□ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wi

文件：224.14 Kbytes 页数：6 Pages

TACHYONICS