DMOS transistor array

Number of Circuits：7\nRoHS Compatible Product(s) (#)：Available Output Current (Max) IOUT 300 mA \nOperational Temperature Topr -40 to 85 ℃ \nStorage Temperature (max) Tstg 150 ℃ \nStorage Temperature (min) Tstg -55 ℃ \nOutput Breakdown Voltage VCE(SUS) 50 V ;

Toshiba

东芝

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

Features • 7 circuits built-in • High voltage : VOUT = 50 V (MAX) • High current : IOUT = 300 mA/ch (MAX) • Input voltage(output on) : TBD62502A series 14 V (MIN) TBD62503A series 2.5 V (MIN) • Input voltage(output off) : TBD62502A series 7.0 V (MAX) TBD62503A series 0.6 V (MAX) • Package

文件：349.22 Kbytes 页数：11 Pages

TOSHIBA

东芝

Package：16-SOIC（0.173"，4.40mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWITCH N-CHAN 1:1 16SOP

Toshiba Semiconductor and Storage

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

Features • 7 circuits built-in • High voltage : VOUT = 50 V (MAX) • High current : IOUT = 300 mA/ch (MAX) • Input voltage(output on) : TBD62502A series 14 V (MIN) TBD62503A series 2.5 V (MIN) • Input voltage(output off) : TBD62502A series 7.0 V (MAX) TBD62503A series 0.6 V (MAX) • Package

文件：349.22 Kbytes 页数：11 Pages

TOSHIBA

东芝

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

Features • 7 circuits built-in • High voltage : VOUT = 50 V (MAX) • High current : IOUT = 300 mA/ch (MAX) • Input voltage(output on) : TBD62502A series 14 V (MIN) TBD62503A series 2.5 V (MIN) • Input voltage(output off) : TBD62502A series 7.0 V (MAX) TBD62503A series 0.6 V (MAX) • Package

文件：349.22 Kbytes 页数：11 Pages

TOSHIBA

东芝

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

Features • 7 circuits built-in • High voltage : VOUT = 50 V (MAX) • High current : IOUT = 300 mA/ch (MAX) • Input voltage(output on) : TBD62502A series 14 V (MIN) TBD62503A series 2.5 V (MIN) • Input voltage(output off) : TBD62502A series 7.0 V (MAX) TBD62503A series 0.6 V (MAX) • Package

文件：349.22 Kbytes 页数：11 Pages

TOSHIBA

东芝