NPN/PNP General Purpose Transistor

Features  Epitaxial planar die construction  Two internal isolated NPN/PNP transistors in one package  Ultra-small surface mount package  Halogen free  Qualified to AEC AEC-Q101 standards for high reliability

文件：981.32 Kbytes 页数：5 Pages

LUGUANG

鲁光电子

45V,0.5A,NPN General Purpose Transistor -45V,-0.5A,PNP General Purpose Transistor

Galaxy

银河微电

Filter specification

文件：201.69 Kbytes 页数：5 Pages

VECTRON

200mW, 4 PIN DIP Phototransistor Photocoupler

文件：490.56 Kbytes 页数：10 Pages

TSC

台湾半导体

Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V)

特点(Features): 电流转换比(CTR: 最小. 50工作条件IF=5mA, VCE=5V) Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V) 绝缘电压：(VISO=5,000Vrms) Insulation Voltage = 5,000Vrms 响应时间 (tr: TYP. 4μs 工作条件 VCE=2V, IC=2mA, RL=100 Ω) Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA, RL=100 Ω)

文件：2.10258 Mbytes 页数：4 Pages

UMW

友台半导体