TBAT54A - 小信号肖特基二极管, 双共阳极, 30 V, 200 mA, 400 mV, 600 mA, 125 °C

The TBAT54A is a silicon planar Schottky Diode encapsulated in formed SMD package. It is used for ultra high speed switching. ·300mA Repetitive peak forward current\n·Lead free device parts\n·125°C Junction temperature;

Multicomp

易络盟

Small-signal Schottky barrier diode

Feature：Low leakage current / Low VF\nInternal Connection：Common anode\nNumber of Circuits：2\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Average Forward Current IO 0.2 A \nReverse Voltage VR 30 V \nMaximum (Peak) Reverse Voltage VRM 35 V ;

Toshiba

东芝

0.2A,30V,Surface Mount Small Signal Schottky Diodes

Galaxy

银河微电

丝印：TB3；Package：SOT23；Schottky Barrier Diode Silicon Epitaxial

文件：195.05 Kbytes 页数：6 Pages

TOSHIBA

东芝

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 30V 100MA SOT23

Toshiba Semiconductor and Storage