首页 >TBAS40-04>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SmallSignalSchottkyDiodes Features -EpoxymeetsUL-94V-0flammabilityrating. -MoisturesensitivityLevel1. -AEC-Q101Qualified. -Lowforwardvoltageschottkyrectifier. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SiliconSchottkyDiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
200mW,LowVF,SMDSchottkyBarrierDiode FEATURES -Metal-on-siliconschottkybarrier -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PackingcodewithsuffixGmeans greencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •Lowforwardvoltage •Fastswitching | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
TECHNICALSPECIFICATIONSOFSURFACEMOUNTSCHOTTKYBARRIERDIODES VOLTAGE-40VoltsCURRENT-0.2Ampere FEATURES *Forgeneralpurposeapplications *Lowforwardvoltagedrop. *Fastswitchingtime. *ProtectedbyaPNjunctionguardringagainstexcessive voltage,suchaselectrostaticdischarge(ESD). | DCCOM Dc Components | DCCOM | ||
Surfacemountschottkybarrierdiode Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SCHOTTKYDIODE FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
SurfaceMountSchottkyBarrierDiodes Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimite | WEITRON Weitron Technology | WEITRON | ||
SCHOTTKYarraySERIES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SurfaceMountSchottkyDiode Voltage:40VoltsPower:200mW Features LowTurn-onVoltage LowForwardVoltage-0.5V(Max)@IF=30mA VeryLowCapacitance-LessThan5.0pF@1V Forhighspeedswitchingapplication,circuitprotection | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP |
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