TLV9061

TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low

TLV9061

TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low

TLV9061

10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems

TLV9061

10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems

TLV9061

10-MHz,RRIO,CMOSOperationalAmplifierforCost-SensitiveSystems

TLV9061

10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems

TLV9061

10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems

TLV9061

TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low

TLV9061

TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low

TLV9061

TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low